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Bulk GaN samples were characterized by both photothermal deflection spectroscopy (PDS) and steady-state photocapacitance (SSPC) methods. The PDS signal intensity in the bandgap was found to correlate quantitatively with the defect density estimated by the SSPC method. The defect density of GaN bulks fabricated by hydride vapor phase epitaxy (HVPE) was decreased by controlling the incorporation of carbon and silicon impurities. Differences in the reciprocal of the slope near the valence band maximum and the signal intensity in the bandgap among HVPE GaN bulks could be detected by PDS, although they had the same crystalline quality. PDS can be used to evaluate the GaN bulks that have been improved with a highly insulative property caused by Fe- doping or low carbon incorporation.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2024. Licensed under the Creative Commons https://creativecommons.org/licenses/by-nc-nd/4.0/.

Keyword: GaN bulk, defect level, photothermal deflection spectroscopy

Date published: 2024-04-06

Publisher: Elsevier BV

Journal:

• Journal of Crystal Growth (ISSN: 00220248) vol. 635 127701

Funding:

• Government of Japan Ministry of Education Culture Sports Science and Technology JPJ005357

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4685

First published URL: https://doi.org/10.1016/j.jcrysgro.2024.127701

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Updated at: 2024-08-26 13:22:37 +0900

Published on MDR: 2026-04-07 08:23:40 +0900