Article I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures

Christian D. Matthus ; Phanish Chava ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials ScienceROR) ; Thomas Mikolajick ; Manfred Helm ; Artur Erbe

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Christian D. Matthus, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe. I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures. IEEE Journal of the Electron Devices Society. 2023, 11 (), 359-366. https://doi.org/10.1109/jeds.2023.3289758
SAMURAI

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(abstract)

In this work, we demonstrate the usability of a fully-2D-material based device consisting of MoS2/WSe2 heterojunction encapsulated by hBN and contacted by graphene as temperature sensor for linear temperature measurement at cryogenic temperatures. More precisely, temperatures in the range of 10 K up to 300 K were applied to the device while recording the I-V characteristics. From this, we had a deeper look on the current transport mechanism by obtaining the activation energy of the saturation current in the Arrhenius diagram. It is 1.3 eV, which can be related to the bandgap of MoS2 or WSe2 (both nominal 1.3 eV) as for traditional pn-junction diodes in bulk materials. Furthermore, we applied a constant forward current to the device while measuring the voltage drop at different temperatures to investigate the temperature-sensor per-formance. In the range of 40 K up to 300 K, the sensitivity of the sensor is ~2 mV/K, which is comparable to Si devices, while the linearity is still lower (R2 ~ 0.94). On the other hand, the demonstrated device consists only of 2D materials and is, thus, substrate independent, ultra-thin, and can be fabricated on a fully flexible substrate in a low-cost process.

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Keyword: MoS2/WSe2 heterojunction, temperature sensor, cryogenic temperatures

Date published: 2023-06-26

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

  • IEEE Journal of the Electron Devices Society (ISSN: 21686734) vol. 11 p. 359-366

Funding:

  • SPES3 Project funded by the German Ministry for Education and Research (BMBF) through the Forschung für neue Mikroelektronik (ForMikro) Program 3146229002/16ES1066K
  • European Social Fund and the Free State of Saxony in the Project Re-Learning 100382146

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1109/jeds.2023.3289758

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Updated at: 2025-02-14 16:30:13 +0900

Published on MDR: 2025-02-14 16:30:14 +0900

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