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In this work, we demonstrate the usability of a fully-2D-material based device consisting of MoS2/WSe2 heterojunction encapsulated by hBN and contacted by graphene as temperature sensor for linear temperature measurement at cryogenic temperatures. More precisely, temperatures in the range of 10 K up to 300 K were applied to the device while recording the I-V characteristics. From this, we had a deeper look on the current transport mechanism by obtaining the activation energy of the saturation current in the Arrhenius diagram. It is 1.3 eV, which can be related to the bandgap of MoS2 or WSe2 (both nominal 1.3 eV) as for traditional pn-junction diodes in bulk materials. Furthermore, we applied a constant forward current to the device while measuring the voltage drop at different temperatures to investigate the temperature-sensor per-formance. In the range of 40 K up to 300 K, the sensitivity of the sensor is ~2 mV/K, which is comparable to Si devices, while the linearity is still lower (R2 ~ 0.94). On the other hand, the demonstrated device consists only of 2D materials and is, thus, substrate independent, ultra-thin, and can be fabricated on a fully flexible substrate in a low-cost process.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: MoS2/WSe2 heterojunction, temperature sensor, cryogenic temperatures

刊行年月日: 2023-06-26

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE Journal of the Electron Devices Society (ISSN: 21686734) vol. 11 p. 359-366

研究助成金:

• SPES3 Project funded by the German Ministry for Education and Research (BMBF) through the Forschung für neue Mikroelektronik (ForMikro) Program 3146229002/16ES1066K
• European Social Fund and the Free State of Saxony in the Project Re-Learning 100382146

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1109/jeds.2023.3289758

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更新時刻: 2025-02-14 16:30:13 +0900

MDRでの公開時刻: 2025-02-14 16:30:14 +0900