Article 表面電子分光法における電子の散乱効果の研究

田沼繁夫 SAMURAI ORCID (物質・材料研究機構)

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Citation
田沼繁夫. 表面電子分光法における電子の散乱効果の研究. 表面科学. 2007, 27 (11), 657-661. https://doi.org/10.1380/jsssj.27.657

Description:

(abstract)

This article describes the inelastic scattering effect on surface electron spectroscopies such as XPS and AES. It is very important to describe the attenuation rate of the electron signal due to inelastic scattering events in a solid in order to improve the accuracy of quantitative surface analysis. For this, “attenuation length (AL) “ has been used for a long time to describe the attenuation rate. AL is, however, replaced by the “effective attenuation length (EAL), which includes the elastic scattering effect, because the signal electrons may not vary exponentially with the thickness of an overlayer film due to the elastic scattering. Then, the meanings and measurements of physical quantities such as electron inelastic mean free path (IMFP) and EAL are described.

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Keyword: surface electron spectroscopies, attenuation length, effective attenuation length, IMFP, inelastic scattering effect

Date published: 2007-04-04

Publisher: 日本表面科学会

Journal:

  • 表面科学 (ISSN: 03885321) vol. 27 issue. 11 p. 657-661

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4211

First published URL: https://doi.org/10.1380/jsssj.27.657

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Updated at: 2024-01-05 22:11:57 +0900

Published on MDR: 2023-07-04 13:30:20 +0900

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