論文 表面電子分光法における電子の散乱効果の研究

田沼繁夫 SAMURAI ORCID (物質・材料研究機構)

コレクション

引用
田沼繁夫. 表面電子分光法における電子の散乱効果の研究. 表面科学. 2007, 27 (11), 657-661. https://doi.org/10.1380/jsssj.27.657

説明:

(abstract)

This article describes the inelastic scattering effect on surface electron spectroscopies such as XPS and AES. It is very important to describe the attenuation rate of the electron signal due to inelastic scattering events in a solid in order to improve the accuracy of quantitative surface analysis. For this, “attenuation length (AL) “ has been used for a long time to describe the attenuation rate. AL is, however, replaced by the “effective attenuation length (EAL), which includes the elastic scattering effect, because the signal electrons may not vary exponentially with the thickness of an overlayer film due to the elastic scattering. Then, the meanings and measurements of physical quantities such as electron inelastic mean free path (IMFP) and EAL are described.

権利情報:

キーワード: surface electron spectroscopies, attenuation length, effective attenuation length, IMFP, inelastic scattering effect

刊行年月日: 2007-04-04

出版者: 日本表面科学会

掲載誌:

  • 表面科学 (ISSN: 03885321) vol. 27 issue. 11 p. 657-661

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4211

公開URL: https://doi.org/10.1380/jsssj.27.657

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更新時刻: 2024-01-05 22:11:57 +0900

MDRでの公開時刻: 2023-07-04 13:30:20 +0900

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