Article Magnetothermal resistance effect in a C o 50 F e 50 / Cu multilayer studied via analysis of electron and lattice thermal conductivities

Fuya Makino SAMURAI ORCID ; Takamasa Hirai SAMURAI ORCID ; Takuma Shiga ORCID ; Hirofumi Suto SAMURAI ORCID ; Hiroshi Fujihisa ; Koichi Oyanagi ORCID ; Satoru Kobayashi ORCID ; Taisuke Sasaki SAMURAI ORCID ; Takashi Yagi ; Ken-ichi Uchida SAMURAI ORCID ; Yuya Sakuraba SAMURAI ORCID

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Fuya Makino, Takamasa Hirai, Takuma Shiga, Hirofumi Suto, Hiroshi Fujihisa, Koichi Oyanagi, Satoru Kobayashi, Taisuke Sasaki, Takashi Yagi, Ken-ichi Uchida, Yuya Sakuraba. Magnetothermal resistance effect in a C o 50 F e 50 / Cu multilayer studied via analysis of electron and lattice thermal conductivities. Physical Review B. 2025, 112 (5), 054407. https://doi.org/10.1103/pd57-gcd5

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(abstract)

This study investigates the giant magnetothermal resistance (GMTR) effect in a fully-bcc epitaxial
Co50Fe50/Cu multilayer through both experimental and theoretical approaches. The applied magnetic field results in a giant change of the cross-plane thermal conductivity (κ) of 37 W m−1 K−1, which reaches 1.5 times larger than the previously reported value for a magnetic multilayer and records the highest value at room temperature among the other solid-state thermal switching materials working on different principles. We investigated the electron thermal conductivity for exploring the remarkable κ by the two-current-series-resistor model combined with the Wiedemann-Franz law. However, the result shows the electron contribution accounts for only
35% of the κ, indicating the presence of additional spin-dependent heat carriers. Further investigation of the lattice thermal conductivity, which is expected to be spin independent, using nonequilibrium molecular dynamics simulations suggests a striking contrast: the additional spin-dependent heat carrier contribution is significantly enhanced in the parallel magnetization configuration but nearly negligible in the antiparallel configuration. These findings provide a fundamental insight into the origin of large GMTR effect and highlight its potential of active
thermal management technologies for future electronic devices.

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Keyword: Magnetothermal resistance, magnetic multilayer, bcc Cu

Date published: 2025-08-04

Publisher: American Physical Society (APS)

Journal:

  • Physical Review B (ISSN: 24699950) vol. 112 issue. 5 054407

Funding:

  • Japan Science and Technology Corporation JPMJER2201
  • Japan Science and Technology Corporation JPMJCR17I1
  • Japan Science and Technology Corporation JPMJFR222G
  • Japan Society for the Promotion of Science 22K20495
  • Japan Society for the Promotion of Science 22H04965
  • Thermal and Electric Energy Technology Foundation

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6090

First published URL: https://doi.org/10.1103/pd57-gcd5

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Updated at: 2026-01-05 09:13:33 +0900

Published on MDR: 2026-01-05 12:20:36 +0900

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