Journal article Giant Gate-Controlled Odd-Parity Magnetoresistance in Magnetized Bilayer Graphene at Room Temperature
Divya Sahani (author) (Search by this author)
;
Sunit Das (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID https://orcid.org/0000-0003-3701-8119
National Institute for Materials Science
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID https://orcid.org/0000-0002-1467-3105
National Institute for Materials Science
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Amit Agarwal (author) (Search by this author)
;
Aveek Bid (author) (Search by this author)
2025A00468G_Antisymmetric_MR__ASMR__in_Graphene_CGT (3).pdf
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Citation
Divya Sahani, Sunit Das, Kenji Watanabe, Takashi Taniguchi, Amit Agarwal, Aveek Bid. Giant Gate-Controlled Odd-Parity Magnetoresistance in Magnetized Bilayer Graphene at Room Temperature. Physical Review Letters. 2025, 134 (10), 106301. https://doi.org/10.1103/physrevlett.134.106301

Description:

(abstract)

In this Letter, we report the discovery of giant room-temperature odd-parity magnetoresistance (OMR) in a bilayer graphene heterostructure interfaced with Cr2⁢Ge2⁢Te6 (CGT). We show that the OMR is electrostatic gate-voltage tunable, exhibiting maximum value near the graphene band edges and diminishing rapidly with increasing charge carrier density. Our theoretical analysis reveals that the OMR originates from the coupling of out-of-plane components of Berry curvature and orbital magnetic moment with the applied magnetic field, signaling intrinsic time-reversal symmetry breaking in the system. This time-reversal symmetry breaking persists at room temperature within the CGT and bilayer graphene heterostructure despite the bulk CGT exhibiting ferromagnetic transition at 65 K. Our Letter opens new avenues for probing band geometric phenomena through magnetotransport measurements, especially in quantum materials where the anomalous Hall effects are immeasurably small due to the extrinsic scattering-dependent contributions canceling Berry curvature contributions.

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Keyword: Bilayer graphene, Magnetoresistance, Berry curvature

Date published: 2025-03-14

Publisher: American Physical Society (APS)

Journal:

  • Physical Review Letters (ISSN: 10797114) vol. 134 issue. 10 106301

Funding:

  • Indian Institute of Technology Kanpur DST/NM/TUE/QM-6/2019(G)
  • Japan Society for the Promotion of Science 19H05790
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 21H05233
  • Department of Science and Technology, Ministry of Science and Technology, India
  • U.S. Army Combat Capabilities Development Command FA5209 22P0166
  • Science and Engineering Research Board MTR/2019/001520

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1103/physrevlett.134.106301

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Updated at: 2026-07-28 11:44:56 +0900

Published on MDR: 2026-07-28 14:26:08 +0900

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