Article Pressure-induced commensurate stacking of graphene on boron nitride

Matthew Yankowitz ; K. Watanabe SAMURAI ORCID (National Institute for Materials Science) ; T. Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Pablo San-Jose ; Brian J. LeRoy

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Matthew Yankowitz, K. Watanabe, T. Taniguchi, Pablo San-Jose, Brian J. LeRoy. Pressure-induced commensurate stacking of graphene on boron nitride. Nature Communications. 2016, 7 (1), 13168. https://doi.org/10.1038/ncomms13168
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(abstract)

We demonstrate unprecedented control over the interactions by locally modifying the interlayer separation between graphene and hBN, which we achieve by applying pressure with a scanning tunneling microscopy (STM) tip. For the case of nearly aligned graphene on hBN, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking. Our results open a path towards tailored electronic properties of vdW heterostructures controlled through the interlayer separation degree of freedom.

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Keyword: Van der Waals materials, heterostructures, electronic properties

Date published: 2016-10-20

Publisher: Springer Science and Business Media LLC

Journal:

  • Nature Communications (ISSN: 20411723) vol. 7 issue. 1 13168

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1038/ncomms13168

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Updated at: 2025-02-27 12:30:26 +0900

Published on MDR: 2025-02-27 12:30:26 +0900

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