Matthew Yankowitz
;
K. Watanabe
(National Institute for Materials Science)
;
T. Taniguchi
(National Institute for Materials Science)
;
Pablo San-Jose
;
Brian J. LeRoy
説明:
(abstract)We demonstrate unprecedented control over the interactions by locally modifying the interlayer separation between graphene and hBN, which we achieve by applying pressure with a scanning tunneling microscopy (STM) tip. For the case of nearly aligned graphene on hBN, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking. Our results open a path towards tailored electronic properties of vdW heterostructures controlled through the interlayer separation degree of freedom.
権利情報:
キーワード: Van der Waals materials, heterostructures, electronic properties
刊行年月日: 2016-10-20
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/ncomms13168
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-27 12:30:26 +0900
MDRでの公開時刻: 2025-02-27 12:30:26 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
ncomms13168.pdf
(サムネイル)
application/pdf |
サイズ | 1.87MB | 詳細 |