論文 Pressure-induced commensurate stacking of graphene on boron nitride

Matthew Yankowitz ; K. Watanabe SAMURAI ORCID (National Institute for Materials Science) ; T. Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Pablo San-Jose ; Brian J. LeRoy

コレクション

引用
Matthew Yankowitz, K. Watanabe, T. Taniguchi, Pablo San-Jose, Brian J. LeRoy. Pressure-induced commensurate stacking of graphene on boron nitride. Nature Communications. 2016, 7 (1), 13168. https://doi.org/10.1038/ncomms13168
SAMURAI

説明:

(abstract)

We demonstrate unprecedented control over the interactions by locally modifying the interlayer separation between graphene and hBN, which we achieve by applying pressure with a scanning tunneling microscopy (STM) tip. For the case of nearly aligned graphene on hBN, the graphene lattice can stretch and compress locally to compensate for the slight lattice mismatch between the two materials. We find that modifying the interlayer separation directly tunes the lattice strain and induces commensurate stacking. Our results open a path towards tailored electronic properties of vdW heterostructures controlled through the interlayer separation degree of freedom.

権利情報:

キーワード: Van der Waals materials, heterostructures, electronic properties

刊行年月日: 2016-10-20

出版者: Springer Science and Business Media LLC

掲載誌:

  • Nature Communications (ISSN: 20411723) vol. 7 issue. 1 13168

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/ncomms13168

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更新時刻: 2025-02-27 12:30:26 +0900

MDRでの公開時刻: 2025-02-27 12:30:26 +0900

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