Article Electronic Structures of Yb3Si5 and Yb3Ge5 Studied by X-ray Absorption Spectroscopy, Resonant X-ray Emission Spectroscopy, Photoelectron Spectroscopy, and LDA+DMFT Calculations

Hitoshi Yamaoka ORCID ; Patrik Thunström ORCID ; Naohito Tsujii SAMURAI ORCID ; Masashi Arita ORCID ; Eike F. Schwier ORCID ; Kenya Shimada ORCID ; Hirofumi Ishii ORCID ; Nozomu Hiraoka ORCID

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Hitoshi Yamaoka, Patrik Thunström, Naohito Tsujii, Masashi Arita, Eike F. Schwier, Kenya Shimada, Hirofumi Ishii, Nozomu Hiraoka. Electronic Structures of Yb3Si5 and Yb3Ge5 Studied by X-ray Absorption Spectroscopy, Resonant X-ray Emission Spectroscopy, Photoelectron Spectroscopy, and LDA+DMFT Calculations. Journal of the Physical Society of Japan. 2025, 94 (7), 074709. https://doi.org/10.7566/jpsj.94.074709

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(abstract)

Electronic structure of the intermediate valence systems Yb3Si5 and Yb3Ge5 were investigated by using high resolution x-ray absorption spectroscopy, resonant x-ray emission spectroscopy, and photoelectron spectroscopy. XAS and RXES revealed that the Yb valence in Yb3Si5 decreased monotonically with decreasing temperature. In contrast, in Yb3Ge5, it remained nearly divalent and exhibits little temperature dependence. The experimental valence-band spectra were further compared with the density of states calculations performed using the local density approximation plus dynamical mean-field theory (LDA+DMFT).

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Keyword: Yb compound, valence, X-ray absorption, Photoelectron spectroscopy, Pressure

Date published: 2025-07-15

Publisher: Physical Society of Japan

Journal:

  • Journal of the Physical Society of Japan (ISSN: 00319015) vol. 94 issue. 7 074709

Funding:

  • Japan Society for the Promotion of Science 24K00590
  • Japan Society for the Promotion of Science 24K21692

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.7566/jpsj.94.074709

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Updated at: 2025-11-13 08:30:24 +0900

Published on MDR: 2025-11-13 08:22:03 +0900

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