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説明:

Electronic structure of the intermediate valence systems Yb3Si5 and Yb3Ge5 were investigated by using high resolution x-ray absorption spectroscopy, resonant x-ray emission spectroscopy, and photoelectron spectroscopy. XAS and RXES revealed that the Yb valence in Yb3Si5 decreased monotonically with decreasing temperature. In contrast, in Yb3Ge5, it remained nearly divalent and exhibits little temperature dependence. The experimental valence-band spectra were further compared with the density of states calculations performed using the local density approximation plus dynamical mean-field theory (LDA+DMFT).

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Yb compound, valence, X-ray absorption, Photoelectron spectroscopy, Pressure

刊行年月日: 2025-07-15

出版者: Physical Society of Japan

掲載誌:

• Journal of the Physical Society of Japan (ISSN: 00319015) vol. 94 issue. 7 074709

研究助成金:

• Japan Society for the Promotion of Science 24K00590
• Japan Society for the Promotion of Science 24K21692

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.7566/jpsj.94.074709

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更新時刻: 2025-11-13 08:30:24 +0900

MDRでの公開時刻: 2025-11-13 08:22:03 +0900