ジャーナル論文 High Power Factor with Compositional and Temperature Stabilities in (Ca x Sr1–x)Si2 Thin Films near Room Temperature
Kodai Aoyama (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Takayoshi Katase (author) (この著者で検索)
ORCID ;
Yoshisato Kimura (author) (この著者で検索)
;
Hiroshi Funakubo (author) (この著者で検索)
ORCID
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引用
Kodai Aoyama, Takao Shimizu, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo. High Power Factor with Compositional and Temperature Stabilities in (Ca x Sr1–x)Si2 Thin Films near Room Temperature. ACS Applied Energy Materials. 2025, 8 (16), 12092-12098. https://doi.org/10.1021/acsaem.5c01558

説明:

(abstract)

The effects of Ca content (x) on the crystalline phases and thermoelectric properties of (CaxSr1–x)Si2 films were investigated. The solubility limit of the cubic phase was found to be narrow, with x = 0.08, compared to that of arc-melted samples. For x ≥ 0.17, a mixed phase was observed, which included a layer phase not previously reported in the arc-melted samples. In both the single cubic-phase region and the mixed-phase regions, the electrical resistivity and Seebeck coefficient varied systematically with x at 323 K. Consequently, a high power factor of approximately 1000 μW m–1 K–2 was achieved over a wide composition range (x = 0.03 to 0.17) at 323 K. The wide compositional tolerance for a high power factor is advantageous for practical fabrication and offers robustness against compositional fluctuations. In addition, the power factor remained above 850 μW m–1 K–2 within the temperature range of 223 to 373 K for x = 0.04 to 0.13. These results highlight that (CaxSr1–x)Si2 films with a predominantly cubic phase are promising candidates for thermoelectric applications near room temperature due to their high power factor across a broad range of compositions and temperatures. Furthermore, the highest power factor of 2000 μW m–1 K–2 was achieved at 210 K for the film with x = 0.04, which consisted solely of the cubic phase. The value exceeds that of previously reported SrSi2 films prepared using the same sputtering method.

権利情報:

  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Energy Materials, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaem.5c01558.

キーワード: Thermoelectrics, Electronic property, Crystal structure, Silicide, Sputtering

刊行年月日: 2025-08-25

出版者: American Chemical Society (ACS)

掲載誌:

  • ACS Applied Energy Materials (ISSN: 25740962) vol. 8 issue. 16 p. 12092-12098

研究助成金:

  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6033

公開URL: https://doi.org/10.1021/acsaem.5c01558

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更新時刻: 2026-04-30 12:01:11 +0900

MDRでの公開時刻: 2026-08-07 08:33:06 +0900

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