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代替タイトル: 超低エネルギーイオンミリング法による超薄試料の作製

説明:

An ultra low energy ion milling method was used to prepare ultrathin specimen for transmission electron microscope observation. The samples were thinned initially by a usual focused ion beam technique or a usual ion milling with higher energy of 2-10 keV, and were thinned additionally by Ar+ ion beam with energy lower than 1 keV, typically 500-900 eV. The ultra low energy ion beam was scanned on the specimen and secondary electrons induced by the ion beam can be detected to form secondary electron images with resolution of a few μm. Because a desired area can be selected and thinned by the ultra low energy ion beam, redeposition or cross contamination with irradiating a metal mesh that supports the sample can be prevented. Final thickness of the specimen was typically 10 nm with a damage

権利情報:

• In Copyright
  

キーワード: Ar-ion milling, sample preparation, ultrathin specimen, low-energy ion beam, gamma-Ga2O3, (Zn, Cr) Te

刊行年月日: 2012-11-14

出版者: Oxford University Press (OUP)

掲載誌:

• MICROSCOPY (JOURNAL OF ELECTRON MICROSCOPY) (ISSN: 20505698) vol. 62 issue. 2 p. 321-326

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4420

公開URL: https://doi.org/10.1093/jmicro/dfs073

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更新時刻: 2024-03-05 08:30:19 +0900

MDRでの公開時刻: 2024-03-05 08:30:19 +0900