Article Mechanistic Insight into the Effect of Cu Doping on Thermoelectric Properties of Sintered Wet-Chemically Synthesized SnSe2 Nanosheets

Simon Moore ; Mari Takahashi ORCID ; Philipp Sauerschnig ORCID ; Keiji Kobayashi ; Koichi Higashimine ; Masanobu Miyata ; Takahiro Baba ; Jun Uzuhashi SAMURAI ORCID ; Michihiro Ohta ORCID ; Takao Mori SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Shinya Maenosono ORCID

Mechanistic Insight into the Effect of Cu Doping on Thermoelectric Properties of Sintered Wet-Chemically Synthesised SnSe2 Nanosheets.pdf
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Simon Moore, Mari Takahashi, Philipp Sauerschnig, Keiji Kobayashi, Koichi Higashimine, Masanobu Miyata, Takahiro Baba, Jun Uzuhashi, Michihiro Ohta, Takao Mori, Tadakatsu Ohkubo, Shinya Maenosono. Mechanistic Insight into the Effect of Cu Doping on Thermoelectric Properties of Sintered Wet-Chemically Synthesized SnSe2 Nanosheets. ACS Applied Energy Materials. 2024, 7 (17), 7467-7477. https://doi.org/10.1021/acsaem.4c01698
SAMURAI

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(abstract)

To provide important insight into the mechanism of Cu doping in the n-type thermoelectric material SnSe2, SnSe2:Cu nanosheets were synthesised, sintered, and subjected to multifaceted analysis using a variety of analytical techniques. The results suggested that the intercalation of Cu+ ions in the Van der Waals gap causes a shift in Fermi energy and contributions to the conduction band by Sn s and Se p orbitals. Increased carrier concentration causes a shift to multiband conduction, and an ionised impurity scattering dominated carrier mobility, which increases with temperature as carrier energy increases since electron-phonon interactions are insignificant. The result was a significantly increased electrical conductivity, and a reduced thermal conductivity thanks to nanosheet grain boundaries. High ZT values of 0.2 in the in plane, and 0.6 in the out-of-plane direction were achieved at 667 K, thus showing the potential of Cu doped polycrystalline SnSe2 as a viable, sustainable n-type thermoelectric material.

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  • In Copyright

    This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Energy Materials, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaem.4c01698

Keyword: thermoelectric materials, electron microscopy, atom probe tomography

Date published: 2024-09-09

Publisher: American Chemical Society (ACS)

Journal:

  • ACS Applied Energy Materials (ISSN: 25740962) vol. 7 issue. 17 p. 7467-7477

Funding:

  • JST-Mirai Program JPMJMI19A1
  • Thermal and Electric Energy Technology Foundation
  • Japan Society for the Promotion of Science 19H02440
  • Ichimura Foundation of New Technology

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4736

First published URL: https://doi.org/10.1021/acsaem.4c01698

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Updated at: 2025-08-26 08:30:23 +0900

Published on MDR: 2025-08-26 08:19:30 +0900

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