Simon Moore
;
Mari Takahashi
;
Philipp Sauerschnig
;
Keiji Kobayashi
;
Koichi Higashimine
;
Masanobu Miyata
;
Takahiro Baba
;
Jun Uzuhashi
;
Michihiro Ohta
;
Takao Mori
;
Tadakatsu Ohkubo
;
Shinya Maenosono
説明:
(abstract)To provide important insight into the mechanism of Cu doping in the n-type thermoelectric material SnSe2, SnSe2:Cu nanosheets were synthesised, sintered, and subjected to multifaceted analysis using a variety of analytical techniques. The results suggested that the intercalation of Cu+ ions in the Van der Waals gap causes a shift in Fermi energy and contributions to the conduction band by Sn s and Se p orbitals. Increased carrier concentration causes a shift to multiband conduction, and an ionised impurity scattering dominated carrier mobility, which increases with temperature as carrier energy increases since electron-phonon interactions are insignificant. The result was a significantly increased electrical conductivity, and a reduced thermal conductivity thanks to nanosheet grain boundaries. High ZT values of 0.2 in the in plane, and 0.6 in the out-of-plane direction were achieved at 667 K, thus showing the potential of Cu doped polycrystalline SnSe2 as a viable, sustainable n-type thermoelectric material.
権利情報:
キーワード: thermoelectric materials, electron microscopy, atom probe tomography
刊行年月日: 2024-09-09
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4736
公開URL: https://doi.org/10.1021/acsaem.4c01698
関連資料:
その他の識別子:
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更新時刻: 2025-08-26 08:30:23 +0900
MDRでの公開時刻: 2025-08-26 08:19:30 +0900
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Mechanistic Insight into the Effect of Cu Doping on Thermoelectric Properties of Sintered Wet-Chemically Synthesised SnSe2 Nanosheets.pdf
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サイズ | 1.22MB | 詳細 |