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The world’s target of achieving net-zero emissions necessitates the development of sustainable green technology. In addition, the myriad Internet of Things (IoT) sensors and devices also require independent electrical power sources which can dynamically harvest energy from their surroundings. As one of the emerging energy harvesting technologies, solid-state devices based on thermoelectricity enable direct conversion between heat and electricity. Bismuth telluride-based compounds have reigned as the long-time champion thermoelectric (TE) materials and devices. However, the use of scarce Te has impeded the growth of this technology. Therefore, much attention has been paid to explore environmentally abundant TE materials with high performance. Recently, Mg3(Sb,Bi)2-based materials have demonstrated a potential for rivaling the traditional champion TE materials because of their high TE figure of merit over unity in the broad temperature range of 300-773 K. This review focuses on a complete perspective that involves material development and extends to TE device parameters. It provides insight into relevant crystal structures, electronic band structures, TE performance, and recently implemented innovative strategies like interstitial doping and grain boundary engineering of Mg3(Sb,Bi)2-based materials. Furthermore, it makes a comprehensive review of TE device parameters, including effective contact layer/diffusion barrier development, geometrical optimization, and fabrication technology. Finally, importantly, this review highlights key factors, challenges, and possible strategies that can be useful in boosting this emerging TE energy harvesting technology toward applications.

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• In Copyright
  

Keyword: thermoelectric

Date published: 2024-07-19

Publisher: Elsevier BV

Journal:

• Device (ISSN: 26669986) vol. 2 issue. 7 100408

Funding:

• Japan Science and Technology Agency
• JST-Mirai Program JPMJMI19A1

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4804

First published URL: https://doi.org/10.1016/j.device.2024.100408

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Updated at: 2024-10-08 16:30:21 +0900

Published on MDR: 2024-10-08 16:30:21 +0900