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We demonstrated the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy using a stripe mask with an ultra-narrow window width of 50-750 nm fabricated by electron-beam lithography. α-Ga2O3 stripes formed only on the windows without unintentional nucleation on the mask even on the mask with the narrowest window. Etch pit observation and cross-sectional TEM revealed that the propagation of dislocation into regrown α-Ga2O3 was dramatically reduced by narrowing the window. The overall dislocation density in the coalesced film including window region and coalesced boundaries was as low as 4x107 cm-2 in the case of the 50-nm-window mask.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yuichi Oshima, Takashi Shinohe; Epitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows. Appl. Phys. Lett. 19 May 2025; 126 (20): 202104 and may be found at https://doi.org/10.1063/5.0269810.

Keyword: Ga2O3, dislocation, HVPE, ELO

Date published: 2025-05-19

Publisher: American Institute of Physics

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 126 issue. 20 202104

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5489

First published URL: https://doi.org/10.1063/5.0269810

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Updated at: 2025-05-21 16:30:09 +0900

Published on MDR: 2025-05-21 16:28:50 +0900