An atomic carbon source for high temperature molecular beam epitaxy of graphene

J. D. Albar; A. Summerfield; T. S. Cheng; A. Davies; E. F. Smith; A. N. Khlobystov; C. J. Mellor; T. Taniguchi; K. Watanabe; C. T. Foxon; L. Eaves; P. H. Beton; S. V. Novikov

doi:10.1038/s41598-017-07021-1

Article An atomic carbon source for high temperature molecular beam epitaxy of graphene

J. D. Albar ; A. Summerfield ; T. S. Cheng ; A. Davies ; E. F. Smith ; A. N. Khlobystov ; C. J. Mellor ; T. Taniguchi (National Institute for Materials Science) ; K. Watanabe (National Institute for Materials Science) ; C. T. Foxon ; L. Eaves ; P. H. Beton ; S. V. Novikov

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J. D. Albar, A. Summerfield, T. S. Cheng, A. Davies, E. F. Smith, A. N. Khlobystov, C. J. Mellor, T. Taniguchi, K. Watanabe, C. T. Foxon, L. Eaves, P. H. Beton, S. V. Novikov. An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports. 2017, 7 (1), 6598. https://doi.org/10.1038/s41598-017-07021-1

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We report the use of a novel atomic carbon source for the MBE of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures between 1400 and 1500C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. AFM measurements reveal the formation of hexagonal moire patterns when graphene monolayers are grown on hBN flakes under optimum conditions. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.

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