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Description:

Light source in the nanoscale has been demanded vigorously due to the rapid advancement of photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the one-dimensional cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing by applying gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. Variations in doping levels caused by electric double layers (EDLs) from ILs introduce a lasing peak wavelength shift of approximately 1.4 nm. In addition, the samples structures are surprisingly simple to fabricate, thus this concept can be universally applicable to optoelectronic systems.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: InP, Nanolaser, Ionic Liquid, Carrier modulation

Date published: 2024-12-16

Publisher: Wiley

Journal:

• Advanced Science (ISSN: 21983844) vol. 12 issue. 8

Funding:

• National Science and Technology Council 111‐2923‐E‐007‐008‐MY3
• National Science and Technology Council 111‐2628‐E‐007‐021
• National Science and Technology Council 112‐2223‐E‐007 ‐007 ‐MY3
• National Science and Technology Council 112‐2923‐E‐007 ‐004 ‐MY2
• National Science and Technology Council 112‐2119‐M‐A49‐008
• National Science and Technology Council 113‐2628‐E‐007‐024
• National Science and Technology Council 113‐2218‐E‐A49‐029

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/advs.202412340

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Updated at: 2025-05-09 12:30:17 +0900

Published on MDR: 2025-05-09 12:28:44 +0900