Download file (3.11MB)
Download as zip (2.61MB)

コレクション

引用

説明:

Light source in the nanoscale has been demanded vigorously due to the rapid advancement of photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the one-dimensional cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing by applying gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. Variations in doping levels caused by electric double layers (EDLs) from ILs introduce a lasing peak wavelength shift of approximately 1.4 nm. In addition, the samples structures are surprisingly simple to fabricate, thus this concept can be universally applicable to optoelectronic systems.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: InP, Nanolaser, Ionic Liquid, Carrier modulation

刊行年月日: 2024-12-16

出版者: Wiley

掲載誌:

• Advanced Science (ISSN: 21983844) vol. 12 issue. 8

研究助成金:

• National Science and Technology Council 111‐2923‐E‐007‐008‐MY3
• National Science and Technology Council 111‐2628‐E‐007‐021
• National Science and Technology Council 112‐2223‐E‐007 ‐007 ‐MY3
• National Science and Technology Council 112‐2923‐E‐007 ‐004 ‐MY2
• National Science and Technology Council 112‐2119‐M‐A49‐008
• National Science and Technology Council 113‐2628‐E‐007‐024
• National Science and Technology Council 113‐2218‐E‐A49‐029

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/advs.202412340

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-05-09 12:30:17 +0900

MDRでの公開時刻: 2025-05-09 12:28:44 +0900