Dataset Evaluation of spin mixing conductance in Co2FeGa0.5Ge0.5/Pt bilayer and the effect of ultrathin Cu, Ni, Ru, Ta, or Cr insertion layers

Madhav Mohan Bhat (author)

Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science
;
Hirofumi Suto (author)
ORCID https://orcid.org/0000-0003-4387-5862
Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science
;
Taisuke T. Sasaki (author)

Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science
;
Alagarsamy Perumal (author)

Indian Institute of Technology (IIT) Guwahati
;
Ananthakrishnan Srinivasan (author)

Indian Institute of Technology (IIT) Guwahati
;
Yuya Sakuraba (author)
ORCID https://orcid.org/0000-0003-4618-9550
Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science

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Madhav Mohan Bhat, Hirofumi Suto, Taisuke T. Sasaki, Alagarsamy Perumal, Ananthakrishnan Srinivasan, Yuya Sakuraba. Evaluation of spin mixing conductance in Co2FeGa0.5Ge0.5/Pt bilayer and the effect of ultrathin Cu, Ni, Ru, Ta, or Cr insertion layers. https://doi.org/10.48505/nims.6269

Description:

(abstract)

Improving the spin mixing conductance at the ferromagnet/heavy metal (FM/HM) interface with a low Gilbert damping constant in the FM layer is a key requirement for developing efficient spintronic devices. To evaluate the potential of Co2FeGa0.5Ge0.5 as the FM layers in such structures, epitaxial Co2FeGa0.5Ge0.5 single-layer and Co2FeGa0.5Ge0.5/Pt bilayer films were deposited on MgO substrates using magnetron sputtering, and their Gilbert damping constants were evaluated from ferromagnetic resonance spectra. While the single-layer samples exhibit a low damping constant of ~ 1.07×10-3, an enhancement in the damping constant was observed in the bilayer samples due to spin pumping across the Co2FeGa0.5Ge0.5/Pt interface, from which relatively large spin mixing conductance (g_eff^(↑↓)) of (2.78±0.09)×1019 m-2 was evaluated. Further, to investigate the effect of interface property on g_eff^(↑↓), ultrathin (~ 0.2 nm) Cu, Ni, Ru, Ta, or Cr insertion layers were introduced between the Co2FeGa0.5Ge0.5 and Pt. Inserting a non-magnetic (NM) Cu layer results in a pronounced decrease of g_eff^(↑↓) g_eff^⇵, whereas the FM Ni layer leavesg_eff^(↑↓) g_eff^⇵ nearly unchanged. In the case of Ru and Ta insertion layers, a modest reduction in g_eff^(↑↓) g_eff^⇵ is observed despite their NM nature. The antiferromagnetic Cr insertion layer also causes a small decrease in g_eff^(↑↓) g_eff^⇵. The observed change in g_eff^(↑↓) depends on the insertion material, indicating that their physical properties, such as magnetic, non-magnetic, antiferromagnetic, light or heavy metal, reflect on g_eff^(↑↓).

Data origin type: other

Rights:

Keyword: Spin pumping, Magnetization dynamics, Spin current, Ferromagnetic resonance, Half-metals, Heusler alloy, Magnetic thin films

Date published:

Publisher: American Physical Society

Journal:

  • Physical Review Materials

Funding:

  • JST ERATO JPMJER2201
  • Advanced Storage Research Consortium
  • JST CREST JPMJCR21O1
  • MEXT X-NICS JPJ011438

Manuscript type: Not a journal article

MDR DOI: https://doi.org/10.48505/nims.6269

First published URL:

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Updated at: 2026-04-30 14:44:02 +0900

Published on MDR: 2026-04-30 18:22:28 +0900

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