Download file (4.9 MB)
Download as zip (4.49 MB)

Collection

Citation

Description:

Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the properties of individual materials as well as their interlayer coupling, thereby exhibiting unique electrical and optical properties. Here, we study and investigate a system consisting entirely of different 2D materials for the implementation of electronic devices that are based on quantum mechanical band-to-band tunneling transport such as tunnel diodes and tunnel field-effect transistors. We fabricated and characterized van der Waals heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different gate configurations to analyze the transport properties of the junction. We found that the device dielectric environment is crucial for achieving tunneling transport across the heterojunction by replacing thick oxide dielectrics with thin layers of hexagonal boronnitride. With the help of additional top gates implemented in different regions of our heterojunction device, it was seen that the tunneling properties as well the Schottky barriers at the contact interfaces could be tuned efficiently by using layers of graphene as an intermediate contact material.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Van der Waals heterostructures, quantum tunneling, tunnel diodes

Date published: 2024-03-09

Publisher: Springer Science and Business Media LLC

Journal:

• Scientific Reports (ISSN: 20452322) vol. 14 issue. 1 5813

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41598-024-56455-x

Related item:

Other identifier(s):

Contact agent:

Updated at: 2025-03-03 16:30:33 +0900

Published on MDR: 2025-03-03 16:30:34 +0900