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説明:

Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the properties of individual materials as well as their interlayer coupling, thereby exhibiting unique electrical and optical properties. Here, we study and investigate a system consisting entirely of different 2D materials for the implementation of electronic devices that are based on quantum mechanical band-to-band tunneling transport such as tunnel diodes and tunnel field-effect transistors. We fabricated and characterized van der Waals heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different gate configurations to analyze the transport properties of the junction. We found that the device dielectric environment is crucial for achieving tunneling transport across the heterojunction by replacing thick oxide dielectrics with thin layers of hexagonal boronnitride. With the help of additional top gates implemented in different regions of our heterojunction device, it was seen that the tunneling properties as well the Schottky barriers at the contact interfaces could be tuned efficiently by using layers of graphene as an intermediate contact material.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Van der Waals heterostructures, quantum tunneling, tunnel diodes

刊行年月日: 2024-03-09

出版者: Springer Science and Business Media LLC

掲載誌:

• Scientific Reports (ISSN: 20452322) vol. 14 issue. 1 5813

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41598-024-56455-x

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更新時刻: 2025-03-03 16:30:33 +0900

MDRでの公開時刻: 2025-03-03 16:30:34 +0900