Article Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping

Somaditya Santra ; Sankalp Samdariya ; Shaili Sett ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Arindam Ghosh

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Somaditya Santra, Sankalp Samdariya, Shaili Sett, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh. Enhancing the contact performance of transition metal dichalcogenide-based field effect transistors using UV-induced doping. APL Electronic Devices. 2025, 1 (4), 046119. https://doi.org/10.1063/5.0292130

Description:

(abstract)

A persistent challenge in transition metal dichalcogenide (TMD)-based transistors is the formation of a Schottky Barrier (SB) at the metal–TMD interface which introduces substantial contact resistance and degrades device performance. Minimizing the barrier height and hence contact resistance—ideally to near-zero—is essential for realizing high-performance 2D material-based field-effect transistors. Here, we present a non-invasive photo doping strategy that leverages ultraviolet irradiation to induce localized n-type doping near the contact region, in hBN/TMD field-effect transistors. This targeted doping with UV exposure significantly reduces the SB, leading to a remarkable improvement in device performance. We demonstrate this with hBN/MoS2 transistors, where we achieve a barrier height reduction of∼100 meV, resulting in a seventy-fold increase in on-state cur- rent and a twenty-fold increase in mobility. We further demonstrate the generality of this approach by applying it to other TMD transistors, such as hBN/MoSe2 and hBN/WSe2 hybrids all of which exhibit similar performance enhancements. These results outline a portable, broadly applicable and scalable contact engineering strategy for next-generation 2D electronic devices.

Rights:

Keyword: transition metal dichalcogenide (TMD)
, contact resistance
, UV-induced doping

Date published: 2025-12-01

Publisher: AIP Publishing

Journal:

  • APL Electronic Devices vol. 1 issue. 4 046119

Funding:

  • Department of Science and Technology, Ministry of Science and Technology, India SP/DSTO-18-2038)
  • Science and Engineering Research Board DST/NM/TUE/QM-10/2019
  • University Grants Commission IE-REAC-23-0168
  • Japan Society for the Promotion of Science 21H05233
  • Japan Society for the Promotion of Science 23H02052
  • Core Research for Evolutional Science and Technology JPMJCR24A5)

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1063/5.0292130

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Updated at: 2026-02-17 12:30:24 +0900

Published on MDR: 2026-02-17 09:11:00 +0900

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