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説明:

A persistent challenge in transition metal dichalcogenide (TMD)-based transistors is the formation of a Schottky Barrier (SB) at the metal–TMD interface which introduces substantial contact resistance and degrades device performance. Minimizing the barrier height and hence contact resistance—ideally to near-zero—is essential for realizing high-performance 2D material-based field-effect transistors. Here, we present a non-invasive photo doping strategy that leverages ultraviolet irradiation to induce localized n-type doping near the contact region, in hBN/TMD field-effect transistors. This targeted doping with UV exposure significantly reduces the SB, leading to a remarkable improvement in device performance. We demonstrate this with hBN/MoS2 transistors, where we achieve a barrier height reduction of∼100 meV, resulting in a seventy-fold increase in on-state cur- rent and a twenty-fold increase in mobility. We further demonstrate the generality of this approach by applying it to other TMD transistors, such as hBN/MoSe2 and hBN/WSe2 hybrids all of which exhibit similar performance enhancements. These results outline a portable, broadly applicable and scalable contact engineering strategy for next-generation 2D electronic devices.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: transition metal dichalcogenide (TMD)
, contact resistance
, UV-induced doping

刊行年月日: 2025-12-01

出版者: AIP Publishing

掲載誌:

• APL Electronic Devices vol. 1 issue. 4 046119

研究助成金:

• Department of Science and Technology, Ministry of Science and Technology, India SP/DSTO-18-2038)
• Science and Engineering Research Board DST/NM/TUE/QM-10/2019
• University Grants Commission IE-REAC-23-0168
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• Core Research for Evolutional Science and Technology JPMJCR24A5)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0292130

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更新時刻: 2026-02-17 12:30:24 +0900

MDRでの公開時刻: 2026-02-17 09:11:00 +0900