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Memristors hold great promise as building blocks of novel computing architectures where memory and logic are combined at hardware level. Scaling down the dimensions of memristive devices has been limited from high leakage currents and thus prohibits further progress. Recent studies have shown the potential of using transition metal dichalcogenides (TMDs) to reduce leakage currents. However, the understanding of the switching mechanisms, in particular the role of metal ion diffusion on vacancy sites and the crystal defects remains elusive. To shed light on that, we report our findings in the performance of monolayer MoS2 memristors for different defect densities. We experimentally demonstrate that defect generation in the MoS2 can enhance the memristive effect by increasing the resistive switching ratio. Finally, we utilize quantum transport simulations and demonstrate the existence of an optimum range of defect densities. Our results reveal the importance of defect engineering and control in TMD memristive devices towards efficient hardware.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Memristors, MoS2, defect densities

刊行年月日: 2022-07-08

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Applied (ISSN: 23317019) vol. 18 issue. 1 014018

研究助成金:

• JSPS JP15K21722

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevapplied.18.014018

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更新時刻: 2025-03-01 12:30:23 +0900

MDRでの公開時刻: 2025-03-01 12:30:23 +0900