Download file (866 KB)
Download as zip (760 KB)

Collection

Citation

Description:

High-performance boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated. Drain current maximum values for the B-diamond MOSFETs working at room temperature (RT) and 300 °C are −1.2 and −10.9 mA/mm, respectively. Both of them show on/off ratios higher than 109 and their extrinsic transconductance maximum values are 29.0 and 215.7 μS/mm, respectively. These properties are better than those of the previous reported values for the B-diamond MOSFETs. This study is meaningful to push forward the development of diamond-based MOSFETs for high-temperature applications.

Rights:

• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. W. Liu, T. Teraji, B. Da, Y. Koide; Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors. Appl. Phys. Lett. 12 February 2024; 124 (7): 072103 and may be found at https://doi.org/10.1063/5.0194424.

Keyword: Boron-doped diamond

Date published: 2024-02-12

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 124 issue. 7 072103

Funding:

• Japan Society for the Promotion of Science JP23K03966
• Japan Society for the Promotion of Science 20H05661
• Japan Society for the Promotion of Science and JP20H00313
• Ministry of Education, Culture, Sports, Science and Technology JPMXS0118068379
• Core Research for Evolutional Science and Technology JPMJCR1773
• Core Research for Evolutional Science and Technology JPMJMS2062

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4962

First published URL: https://doi.org/10.1063/5.0194424

Related item:

Other identifier(s):

Contact agent:

Updated at: 2024-11-16 08:30:13 +0900

Published on MDR: 2024-11-16 08:30:14 +0900