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Description:

Diamond exhibits unique properties enabling the fabrication of high-performance p-channel field-effect transistors, an achievement that remains challenging for other wide-bandgap semiconductors. This distinct potential positions diamond as an exceptional semiconductor material for realizing complementary power inverter circuits and other advancements in power electronics. This paper provides a comprehensive review of the progress on diamond field-effect transistors, with particular emphasis on the diamond/gate insulator interface and its critical influence on device performance.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: Diamond, Transistor, Field effect

Date published:

Publisher: 応用物理学会

Journal:

• JSAP Review (ISSN: 24370061) vol. 2025

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5727

First published URL: https://doi.org/10.11470/jsaprev.250205

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Updated at: 2025-09-03 12:31:04 +0900

Published on MDR: 2025-09-03 12:20:35 +0900