Charge-transfer contacts for the measurement of correlated states in high-mobility WSe2

Jordan Pack; Yinjie Guo; Ziyu Liu; Bjarke S. Jessen; Luke Holtzman; Song Liu; Matthew Cothrine; Kenji Watanabe; Takashi Taniguchi; David G. Mandrus; Katayun Barmak; James Hone; Cory R. Dean

doi:10.1038/s41565-024-01702-5

Journal article Charge-transfer contacts for the measurement of correlated states in high-mobility WSe2

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Jordan Pack, Yinjie Guo, Ziyu Liu, Bjarke S. Jessen, Luke Holtzman, Song Liu, Matthew Cothrine, Kenji Watanabe, Takashi Taniguchi, David G. Mandrus, Katayun Barmak, James Hone, Cory R. Dean. Charge-transfer contacts for the measurement of correlated states in high-mobility WSe2. Nature Nanotechnology. 2024, 19 (7), 948-954. https://doi.org/10.1038/s41565-024-01702-5

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Two-dimensional semiconductors, such as transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for two-dimensional semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure the magnetotransport properties of high-purity monolayer WSe2. We measure a record-high hole mobility of 80,000 cm2 V–1 s–1 and access channel carrier densities as low as 1.6 × 1011 cm−2, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurements of correlation-driven quantum phases including the observation of a low-temperature metal–insulator transition in a density and temperature regime where Wigner crystal formation is expected and the observation of the fractional quantum Hall effect under large magnetic fields. The charge-transfer contact scheme enables the discovery and manipulation of new quantum phenomena in two-dimensional semiconductors and their heterostructures.

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