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Description:

As miniaturization of semiconductor memory devices is reaching its physical and technological limits, there is a demand for memory technologies that operate on new principles. Atomic switches are nanoionic devices that show repeatable resistive switching between high-resistance and low-resistance states under bias voltage applications, based on the transport of metal ions and redox reactions in solids. Their essential structure consists of an ion conductor sandwiched between electrochemically active and inert electrodes. This review focuses on the resistive switching mechanism of atomic switches that utilize a solid polymer electrolyte (SPE) as the ion conductor. Owing to the superior properties of polymer materials such as mechanical flexibility, compatibility with various substrates, and low fabrication costs, SPE-based atomic switches are a promising candidate for the next-generation of volatile and nonvolatile memories. Herein, we describe their operating mechanisms and key factors for controlling the device performance with different polymer matrices. In particular, the effects of moisture absorption in the polymer matrix on the resistive switching behavior are addressed in detail. As potential applications, atomic switches with inkjet-printed SPE and quantum conductance behavior are described. SPE-based atomic switches also have great potential in use for neuromorphic devices. The development of these devices will be enhanced using nanoarchitectonics concepts, which integrates functional materials and devices.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: atomic switch, resistive switching, solid polymer electrolyte, moisture absorption, inkjet printing, quantum conductance, Neuromorphic computing

Date published: 2024-12-31

Publisher: Informa UK Limited

Journal:

• Science and Technology of Advanced Materials (ISSN: 14686996) vol. 25 issue. 1 2342772

Funding:

• Key-Technology Research Project from the Ministry of Education, Culture, Sports, Science and Technology (MEXT)
• ‘Advanced Research Infrastructure for Materials and Nanotechnology in Japan (ARIM)’ of MEXT JPMXP1223NM5065
• JSPS KAKENHI 2435078, 24310107, 17K05065, 21H03412

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1080/14686996.2024.2342772

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Updated at: 2024-05-24 12:30:22 +0900

Published on MDR: 2024-05-24 12:30:22 +0900