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In the planar heterostructure of perovskite based solar cells (PSCs), tin oxide (SnO2) is a material that is often used as the electron transport layer (ETL). Because SnO2 ETL exhibits favorable optical and electrical properties in the PSC structures. Nevertheless, the open circuit voltage (VOC) depletion occurs in PSCs due to the defects arising from the high oxygen vacancy on the SnO2 surface and the deeper conduction band (CB) energy level of SnO2. In this research, cerium (Ce) dopant was introduced in SnO2 (Ce-SnO2) to suppress the VOC loss of the PSCs. The CB minimum of SnO2 was shifted closer to that of the perovskite after introducing the Ce doping. Besides, the Ce doping effectively passivated the surface defects on the SnO2 as well as improved the electron transport velocity by the Ce-SnO2. These results enabled the power conversion efficiency (PCE) to increase from 21.1% (SnO2) to 23.0% (Ce-SnO2) of the PSCs (0.09 cm2 active area) with around 100 mV improved VOC and reduced hysteresis. Also, the Ce-SnO2 ETL based large area (1.0 cm2) PSCs delivered the highest PCE of 22.9%. Furthermore, VOC of 1.19 V with PCE of 23.3% was demonstrated by Ce-SnO2 ETL based PSCs (0.09 cm2 active area) that were treated with 2-phenethylamine hydroiodide on the perovskite top surface. Notably, the unencapsulated Ce-SnO2 ETL based PSC was able to maintain above 90% of its initial PCE for around 2000 h which was stored at room temperature condition (23~25°C) with relative humidity of 40~50%.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Ce-Doped SnO2 Electron Transport Layer for Minimizing Open Circuit Voltage Loss in Lead Perovskite Solar Cells, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.4c05180

キーワード: Ce-Doped SnO2 , Electron Transport Layer, Perovskite Solar Cells

刊行年月日: 2024-06-26

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 16 issue. 25 p. 32282-32290

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP1223BA0024
• Japan Society for the Promotion of Science 22H02190
• Advanced Low Carbon Technology Research and Development Program JPMJAN23B2

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5259

公開URL: https://doi.org/10.1021/acsami.4c05180

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更新時刻: 2025-06-12 08:30:22 +0900

MDRでの公開時刻: 2025-06-12 08:20:28 +0900