">
Andrew Y. Joe
;
Kateryna Pistunova
;
Kristen Kaasbjerg
;
Ke Wang
;
Bumho Kim
;
Daniel A. Rhodes
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
James Hone
;
Tony Low
;
Luis A. Jauregui
;
Philip Kim
Description:
(abstract)Employing flux-grown single crystal WSe2, we report charge carrier scattering behaviors measured in h-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility μ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.
Rights:
© 2024 American Physical Society
Keyword: WSe2 single crystal, Quantum transport, Quantum point contact
Date published: 2024-01-30
Publisher: American Physical Society (APS)
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI:
First published URL: https://doi.org/10.1103/physrevlett.132.056303
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-08-28 08:30:32 +0900
Published on MDR: 2025-08-28 08:18:03 +0900
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2024A00180G_High_mobility_charge_transport_in_monolayer_WSe2[60].pdf
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