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説明:

Employing flux-grown single crystal WSe₂, we report charge carrier scattering behaviors measured in h-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility μ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.

権利情報:

• In Copyright
  © 2024 American Physical Society

キーワード: WSe2 single crystal, Quantum transport, Quantum point contact

刊行年月日: 2024-01-30

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Letters (ISSN: 10797114) vol. 132 issue. 5 056303

研究助成金:

• Army Research Office
• Core Research for Evolutional Science and Technology JPMJCR15F3
• Japan Science and Technology Agency
• Multidisciplinary University Research Initiative
• Samsung
• Horizon 2020 Framework Programme
• HORIZON EUROPE Marie Sklodowska-Curie Actions 713683
• Ministry of Education, Culture, Sports, Science and Technology JPMXP0112101001
• Japan Society for the Promotion of Science 312 JP20H00354

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/physrevlett.132.056303

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更新時刻: 2025-08-28 08:30:32 +0900

MDRでの公開時刻: 2025-08-28 08:18:03 +0900