Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer

Jiangwei Liu; Hirotaka Ohsato; Bo Da; Yasuo Koide

doi:10.1109/ICEICT57916.2023.10245613

プロシーディングス Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer

Jiangwei Liu (National Institute for Materials Science) ; Hirotaka Ohsato (National Institute for Materials Science) ; Bo Da (National Institute for Materials Science) ; Yasuo Koide (National Institute for Materials Science)

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Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer. https://doi.org/10.1109/ICEICT57916.2023.10245613

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(abstract)

Diamond-based devices are suitable for high-power, low power-loss, high-frequency, and high-temperature applications. Most of diamond-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on small-area diamond wafers (3 × 3 mm2). In order to promote the diamond-based devices for future applications, it is necessary to investigate the electrical properties of them on the large-area wafers. Here, we fabricate 720 hydrogen-terminated diamond MOSFETs on a large-area wafer (8 × 8 mm2). Electrical properties of them are investigated and discussed.

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