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Diamond-based devices are suitable for high-power, low power-loss, high-frequency, and high-temperature applications. Most of diamond-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on small-area diamond wafers (3 × 3 mm2). In order to promote the diamond-based devices for future applications, it is necessary to investigate the electrical properties of them on the large-area wafers. Here, we fabricate 720 hydrogen-terminated diamond MOSFETs on a large-area wafer (8 × 8 mm2). Electrical properties of them are investigated and discussed.

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Keyword: diamond

Date published: 2023-07-21

Publisher: IEEE

Journal:

Conference: 2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT) (2023-07-21 - 2023-07-24)

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Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4411

First published URL: https://doi.org/10.1109/ICEICT57916.2023.10245613

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Updated at: 2025-04-10 21:41:21 +0900

Published on MDR: 2024-02-27 12:30:17 +0900