Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

Gokul Acharya; Bimal Neupane; Chia‐Hsiu Hsu; Xian P. Yang; David Graf; Eun Sang Choi; Krishna Pandey; Md Rafique Un Nabi; Santosh Karki Chhetri; Rabindra Basnet; Sumaya Rahman; Jian Wang; Zhengxin Hu; Bo Da; Hugh O. H Churchill; Guoqing Chang; M. Zahid Hasan; Yuanxi Wang; Jin Hu

doi:10.1002/adma.202410655

ジャーナル論文 Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors

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Gokul Acharya, Bimal Neupane, Chia‐Hsiu Hsu, Xian P. Yang, David Graf, Eun Sang Choi, Krishna Pandey, Md Rafique Un Nabi, Santosh Karki Chhetri, Rabindra Basnet, Sumaya Rahman, Jian Wang, Zhengxin Hu, Bo Da, Hugh O. H Churchill, Guoqing Chang, M. Zahid Hasan, Yuanxi Wang, Jin Hu. Insulator‐to‐Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors. Advanced Materials. 2024, 36 (48), 2410655. https://doi.org/10.1002/adma.202410655

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Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. This isotropic magnetoresistance originates from the combined effects of a near‐zero spin–orbit coupling of Gd³⁺‐based half‐filling f‐electron system and the strong on‐site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet‐based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

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