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We have fabricated the GaAs/Ge/GaAs heterostructures on the {111}-oriented substrates using molecular-beam epitaxy for quasi-phase matching applications in nonlinear optics. The nonlinear optical coefficient of GaAs is beyond that of conventional LiNbO3, enabling more efficient generation of entangled photon pairs via parametric downconversion. We show that GaAs films with either (111)A- or (111)B-orientation could be grown on the Ge/GaAs{111} substrates, regardless of the polarity of the initial substrates; the (111)A- and (111)B-oriented GaAs overlayers were grown when the surfaces of Ge interlayers on the GaAs{111} substrates were terminated with 1 monolayer (ML)-Ga and 1 ML-In, respectively. Both (111)A- and (111)B-oriented GaAs overlayers have atomically flat surfaces and are almost free of defects, such as rotational twins and stacking faults. The present results provide a promising way to improve the efficiency of nonlinear optical processes in quasi-phase matching devices.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Akihiro Ohtake, Yusuke Hayashi; Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures. Appl. Phys. Lett. 19 May 2025; 126 (20): 201601 and may be found at https://doi.org/10.1063/5.0271426.

Keyword: Heterostructures, Quasi-phase matching, Surface structure, molecular-beam epitaxy

Date published: 2025-05-19

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 126 issue. 20

Funding:

• JSPS JP23K04592 (カルコゲナイド系層状物質の高品質ヘテロ積層構造：ＭＢＥ法による成長技術の開発)

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5488

First published URL: https://doi.org/10.1063/5.0271426

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Updated at: 2025-05-20 16:30:12 +0900

Published on MDR: 2025-05-20 16:25:06 +0900