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In this Account, we provide an overview of the recent research and strategies in SCD diamond MEMS for achieving high Q-factors, focusing on those fabricated by the smart-cut method developed in our lab. We start with the concept of diamond MEMS, covering structure fabrication, fundamentals, and applications. A comprehensive discussion of the energy dissipation mechanisms on the Q factors in diamond MEMS resonators is provided. The approaches to enhance the Q-factor of diamond resonators including (1) the
growth of high crystal quality SCD epilayer on the ion-implanted substrate, (2) defects engineering, and (3) strain engineering by thinning the resonator to around 100 nm thick are presented. In the smart-cut method, the ∼100 nm thick defective layer contributes to the main intrinsic energy loss. By combing the growth of a high crystal quality diamond epilayer above the defective layer and the atomic scale etching of the defective layer, the Q-factors could be improved from thousands to over one million at room temperature, the highest among all the semiconductors. The intrinsic high Q-factors of SCD MEMS are also due to the well controlled
purity of the diamond epilayer and the ultrawide bandgap energy of diamond. Through strain engineering of the SCD MEMS beam to nanoscale, the Q-factor is expected to be further enhanced. These strategies
represent pivotal steps in advancing the performance and applicability of diamond MEMS resonators.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Accounts of Materials Research, copyright © 2024 Accounts of Materials Research. Co-published by ShanghaiTech University and American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/accountsmr.4c00139

キーワード: Diamond, MEMS

刊行年月日: 2024-09-27

出版者: American Chemical Society (ACS)

掲載誌:

• Accounts of Materials Research (ISSN: 26436728) vol. 5 issue. 9 p. 1087-1096

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPJSBP120227203
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5297
• Japan Society for the Promotion of Science 22K18957
• Japan Society for the Promotion of Science 24H00287
• China Scholarship Council 202006400023
• Chinese Academy of Sciences

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4838

公開URL: https://doi.org/10.1021/accountsmr.4c00139

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更新時刻: 2025-07-29 08:30:21 +0900

MDRでの公開時刻: 2025-07-29 08:17:54 +0900