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Description:

Silicon is commonly used as a sensor material in a wide variety of imaging application. In recent high-energy and intensity beam experiments, high radiation tolerance is required, and new semiconductor detector consisting of radiation-hard materials have been investigated. The Cu(In,Ga)Se2 (CIGS) semiconductor is expected to possess high radiation tolerance, with the ability to recover from radiation damage through the compensation of defects by ions. The CIGS has originally developed for a solar cell and its radiation tolerance was investigated for the usage in space. The CIGS, featuring a recovery capability, would shed new light to particle detector in high radiation environments. CIGS detectors (2 and 5 μm thick) were tested by Xe ion (400 MeV/u, 132Xe54+) at HIMAC, successfully detecting single Xe ion with a fast response. The output charge is understandable through estimation with the GEANT4 simulation. With 0.6 MGy irradiation by Xe ions, the CIGS output degraded to 50%, but it was recovered to 97% after the heat treatment under 130 ◦C for 2 hours. This marks a significant step in confirming that CIGS semiconductors can serve as particle detectors with recovery features for radiation damage.

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• In Copyright
  © 2024 IOP Publishing Ltd and Sissa Medialab
  This is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Instrumentation. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1748-0221/19/05/c05042

Keyword: CIGS, Semiconductor detector, Particle physics

Date published: 2024-05-01

Publisher: IOP Publishing

Journal:

• Journal of Instrumentation (ISSN: 17480221) vol. 19

Funding:

• JSPS KAKENHI 21K18635
• JSPS KAKENHI 23H01191

Manuscript type: Author's version (Accepted manuscript)

MDR DOI:

First published URL: https://doi.org/10.1088/1748-0221/19/05/c05042

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Updated at: 2024-05-31 11:33:21 +0900

Published on MDR: 2025-05-20 08:19:01 +0900