Article Spin States of Trioxotriangulene Controlled by Si–O Bond Formation and Dissociation on AuSi x Surfaces

Zhangyu Yuan ORCID (Graduate School of Pure and Applied Sciences, University of Tsukuba) ; Toshikaze Kariyado SAMURAI ORCID (Research Center for Materials Nanoarchitectonics, National Institute for Materials Science) ; Tsuyoshi Murata ORCID (Department of Applied Chemistry, Faculty of Engineering, Aichi Institute of Technology) ; Kewei Sun SAMURAI ORCID (Center for Basic Research on Materials, National Institute for Materials Science) ; Donglin Li (Center for Basic Research on Materials, National Institute for Materials Science) ; Oscar Custance SAMURAI ORCID (Center for Basic Research on Materials, National Institute for Materials Science) ; Yasushi Morita ORCID (Department of Applied Chemistry, Faculty of Engineering, Aichi Institute of Technology) ; Shigeki Kawai SAMURAI ORCID (Center for Basic Research on Materials, National Institute for Materials Science)

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Zhangyu Yuan, Toshikaze Kariyado, Tsuyoshi Murata, Kewei Sun, Donglin Li, Oscar Custance, Yasushi Morita, Shigeki Kawai. Spin States of Trioxotriangulene Controlled by Si–O Bond Formation and Dissociation on AuSi x Surfaces. Nano Letters. 2025, 25 (34), 13040-13046. https://doi.org/10.1021/acs.nanolett.5c03477

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(abstract)

The radical molecules have attracted significant attention from researchers because their electronic and spin properties can be controlled via the structure and heteroatoms. With the advancements in on-surface synthesis, it has become possible to conduct spin engineering at the single-molecule level. Here, we investigate the controllable polarized and electronic states of 4,8,12-trioxotriangulene adsorbed on AuSix/Au(111) surfaces with a combination of scanning tunneling microscopy (STM) operated at 4.3 K and density functional theory calculations. A rich variety of STM topographic contrasts of the molecule reveals various interactions between the molecule and the substrate. We found that the magnetic and electronic properties can be modulated through tip-induced formation and dissociation of a Si–O bond. This finding may pave the way for advancements in molecular spintronics.

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Keyword: scanning tunneling microscopy/spectroscopy, singlemolecule, neutral radical, spin, Si−Obond, tip-inducedmanipulation

Date published: 2025-08-27

Publisher: American Chemical Society (ACS)

Journal:

  • Nano Letters (ISSN: 15306984) vol. 25 issue. 34 p. 13040-13046

Funding:

  • Ministry of Education, Culture, Sports, Science and Technology 24KF0269
  • Ministry of Education, Culture, Sports, Science and Technology 25H00422
  • Ministry of Education, Culture, Sports, Science and Technology 22H00285
  • Ministry of Education, Culture, Sports, Science and Technology 22H02066
  • Ministry of Education, Culture, Sports, Science and Technology 24K21721

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1021/acs.nanolett.5c03477

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Updated at: 2025-09-03 12:30:39 +0900

Published on MDR: 2025-09-03 12:20:35 +0900

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