論文 Structural analysis and transport properties of [010]-tilt grain boundaries in Fe(Se,Te)

Kazumasa Iida (College of Industrial Technology, Nihon University) ; Yoshihiro Yamauchi ; Takafumi Hatano ; Kai Walter ; Bernhard Holzapfel ; Jens Hänisch ; Zimeng Guob ; Hongye Gao ; Haoshan Shi ; Shinnosuke Tokuta ; Satoshi Hata ; Akiyasu Yamamoto ; Hiroshi Ikuta

コレクション

引用
Kazumasa Iida, Yoshihiro Yamauchi, Takafumi Hatano, Kai Walter, Bernhard Holzapfel, Jens Hänisch, Zimeng Guob, Hongye Gao, Haoshan Shi, Shinnosuke Tokuta, Satoshi Hata, Akiyasu Yamamoto, Hiroshi Ikuta. Structural analysis and transport properties of [010]-tilt grain boundaries in Fe(Se,Te). Science and Technology of Advanced Materials. 2024, 25 (), 2384829. https://doi.org/10.1080/14686996.2024.2384829

説明:

(abstract)

Understanding the nature of grain boundaries is a prerequisite for fabricating high-performance superconducting bulks and wires. For iron-based superconductors [e.g. Ba(Fe,Co) 2As 2, Fe(Se,Te), and NdFeAs(O,F)], the dependence of the critical current density Jc on misorientation angle (θGB) has been explored on [001]-tilt grain boundaries, but no data for other types of orientations have been reported. Here, we report on the structural and transport properties of Fe(Se,Te) grown on CeO 2-buffered symmetric [010]-tilt roof-type SrTiO 3 bicrystal substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscopy revealed that θGB of Fe(Se,Te) was smaller whereas θGB of CeO 2 was larger than that of the substrate. The difference in θGB between the CeO 2 buffer layer and the substrate is getting larger with increasing θGB. For θGB≥24∘ of the substrates, θGB of Fe(Se,Te) was zero, whereas θGB of CeO 2 was continuously increasing. The inclined growth of CeO 2 can be explained by the geometrical coherency model. The c-axis growth of Fe(Se,Te) for θGB≥24∘ of the substrates is due to the domain matching epitaxy on (221) planes of CeO 2. Electrical transport measurements confirmed no reduction of inter-grain Jc for θGB≤9∘, indicative of strong coupling between the grains.

権利情報:

キーワード: Fe(Se,Te), roof-type grain boundary, domain matching epitaxy

刊行年月日: 2024-12-31

出版者: Taylor & Francis

掲載誌:

  • Science and Technology of Advanced Materials (ISSN: 14686996) vol. 25 2384829

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4704

公開URL: https://doi.org/10.1080/14686996.2024.2384829

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更新時刻: 2025-07-16 16:14:48 +0900

MDRでの公開時刻: 2024-08-30 08:30:29 +0900

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