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To expand the potential of 2D materials in memory devices, we investigated the orbital torques in the nitride-based 2D-MXene, which is referred to as a post graphene and transition-metal dichalcogenides. Epitaxial and polycrystalline Cr2N 2D-MXene films were developed by reactive nitridation sputtering, and field-free perpendicular magnetization switching was achieved with a critical current density comparable to W/CoFeB systems. X-ray magnetic circular dichroism revealed that this behavior originates from interfacial uncompensated Cr moments, antiparallel to the ferromagnet, which act as an efficient spin filter for z-polarized spins. Beyond the MXene, efficient spintronic functionalities have been developed in nitride-based materials, which is associated with the strong p–d hybridization with interstitial nitrogen. These findings motivate the concept of “Nitrospinics,” nitrogen-enabled efficient and stable spintronic properties. This talk will highlight Nitrospinics-driven advances and their implications for future orbital torque memories.

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  © 2026 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keyword: Nitrospinics, Mxene, Orbital torque, MRAM, Current induced magnetization switching

Conference: The 37th Magnetic Recording Conference (TMRC 2026) (2026-08-02 - 2026-08-05)

Funding:

• JSPS 23K22803
• JSPS 25K01275

Manuscript type: Not a journal article

MDR DOI: https://doi.org/10.48505/nims.6477

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Updated at: 2026-08-24 16:18:18 +0900

Published on MDR: 2026-08-24 18:28:19 +0900