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To expand the potential of 2D materials in memory devices, we investigated the orbital torques in the nitride-based 2D-MXene, which is referred to as a post graphene and transition-metal dichalcogenides. Epitaxial and polycrystalline Cr2N 2D-MXene films were developed by reactive nitridation sputtering, and field-free perpendicular magnetization switching was achieved with a critical current density comparable to W/CoFeB systems. X-ray magnetic circular dichroism revealed that this behavior originates from interfacial uncompensated Cr moments, antiparallel to the ferromagnet, which act as an efficient spin filter for z-polarized spins. Beyond the MXene, efficient spintronic functionalities have been developed in nitride-based materials, which is associated with the strong p–d hybridization with interstitial nitrogen. These findings motivate the concept of “Nitrospinics,” nitrogen-enabled efficient and stable spintronic properties. This talk will highlight Nitrospinics-driven advances and their implications for future orbital torque memories.

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キーワード: Nitrospinics, Mxene, Orbital torque, MRAM, Current induced magnetization switching

会議: The 37th Magnetic Recording Conference (TMRC 2026) (2026-08-02 - 2026-08-05)

研究助成金:

• JSPS 23K22803
• JSPS 25K01275

原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.6477

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更新時刻: 2026-08-24 16:18:18 +0900

MDRでの公開時刻: 2026-08-24 18:28:19 +0900