Hayato Yonemoto
(RCIQE, Hokkaido University)
;
Rui Ochiai
(RCIQE, Hokkaido University)
;
Soh Komatsu
(Japan Advanced Institute of Science and Technology)
;
Masashi Akabori
(Japan Advanced Institute of Science and Technology)
;
Shinjiro Hara
(Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Semiconductor Nano-integration Group, National Institute for Materials Science)
Alternative title: Substrate Materials dependence of Magnetic Domain Formation in CoFe Nanolayer Electrode Patterns
Description:
(abstract)In this study, we report on the substrate materials dependences of magnetic domain formation in ferromagnetic CoFe nanolayer electrode patterns with CoFe layer thicknesses of 35 nm using direct observations by MFM. The substrate materials in the current study are MgO nanolayers, whose thicknesses are 1 and 4 nm, deposited on GaAs (001) wafers and amorphous SiO2 layers with the thickness of 1 μm thermally oxidized on Si (111) wafer surfaces. The influence of heterointerfaces on magnetic domain formation in CoFe nanolayer electrode patterns is also discussed. Without any application of B, we observe the marked reflux, double reflux, and single magnetic domains in the case of the samples with relatively thick buffer layers under CoFe. The CoFe nanolayer electrode patterns with 1-nm-MgO layers formed large number of (or multiple) small magnetic domains. These results suggest that the surface roughness of buffer layers plays an important role for magnetic domain formation in CoFe.
Rights:
©2025 The Japan Society of Applied Physics
Keyword: Magnetic domain formation, CoFe/MgO, Magnetic force microscopy, GaAs(001)
Conference:
The 38th International Microprocesses and Nanotechnology Conference (MNC 2025)
(2025-11-17 - 2025-11-20)
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5919
First published URL:
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Updated at: 2025-11-21 16:30:13 +0900
Published on MDR: 2025-11-21 16:23:44 +0900
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