Keyun Gu
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Zilong Zhang
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
)
;
Guo Chen
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
)
;
Liwen Sang
(Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group, National Institute for Materials Science
)
;
Jian Huang
(Shanghai University)
;
Yasuo Koide
(Research Center for Electronic and Optical Materials, National Institute for Materials Science
)
;
Meiyong Liao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
)
Description:
(abstract)Diamond-based solar blind ultraviolet (UV) photodetectors (PDs) have attracted extensive attention due to their unique characteristics in extremely harsh environment. Until now, its low responsivity has not been sufficient to meet the needs of the application. Here, an ultrahigh performance diamond-based solar blind UV PD was obtained by controlling the two-dimensional hole carrier concentration on the epilayer-free Ib-type diamond surface through adjusting the time of hydrogen plasma treatment. The diamond-based PD with 30 min hydrogen plasma treatment exhibits an ultrahigh responsivity of 16683 A/W and a superhigh external quantum efficiency (EQE) of 9.41×106%, which are far superior to the previously reported diamond-based, AlGaN-based, and Ga2O3-based solar blind PDs. These results open up a facile route to prepare high-performance photodetectors.
Rights:
Keyword: Diamond, photodetector
Date published:
Publisher: IEEE
Journal:
Conference:
IEEE-NEMS 2024
(2024-05-02 - 2024-05-05)
Funding:
Manuscript type: Not a journal article
MDR DOI: https://doi.org/10.48505/nims.4510
First published URL: https://www.ieee-nems2024.org/
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Other identifier(s):
Contact agent:
Updated at: 2024-05-16 12:30:23 +0900
Published on MDR: 2024-05-16 12:30:24 +0900
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Keyun Gu IEEE-NEMS 20231214-check Liao-R.pdf
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