Xiaoling Liu
;
Nadine Leisgang
;
Pavel E. Dolgirev
;
Alexander A. Zibrov
;
Jiho Sung
;
Jue Wang
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Valentin Walther
;
Hongkun Park
;
Eugene Demler
;
Philip Kim
;
Mikhail D. Lukin
Description:
(abstract)Emergent strongly-correlated electronic phenomena in atomically-thin transition metal dichalcogenides are an exciting frontier in condensed matter physics, with examples ranging from bilayer superconductivity [1] and electronic Wigner crystals [2, 3] to the ongoing quest for exciton condensation [4–6]. Here, we experimentally investigate the properties of indirect excitons in naturally-grown MoS2 -homobilayer, integrated in a dual-gate device structure allowing independent control of the electron density and out-of-plane electric field. Under conditions when electron tunneling between the layers is negligible [7], upon electron doping the sample, we ob- serve that the two excitons with opposing dipoles hybridize, displaying unusual behavior distinct from both conventional level crossing and anti- crossing. We show that these observations can be explained by static random coupling between the excitons, which increases with electron density and decreases with temperature. We argue that this phenomenon is indicative of a spatially fluctuating order parameter in the form of inter- layer electron coherence, a theoretically predicted many-body state [8] that has yet to be unambiguously established experimentally outside of the quantum Hall regime [6, 9–14]. Implications of our findings for future experiments and quantum optics applications are discussed.
Rights:
Keyword: interlayer electron coherence, bilayer semiconductor , MoS2 homobilayers
Date published: 2025-08-20
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/s41567-025-02971-0
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Updated at: 2026-05-11 13:34:46 +0900
Published on MDR: 2026-05-11 16:25:05 +0900
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