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説明:

Emergent strongly-correlated electronic phenomena in atomically-thin transition metal dichalcogenides are an exciting frontier in condensed matter physics, with examples ranging from bilayer superconductivity [1] and electronic Wigner crystals [2, 3] to the ongoing quest for exciton condensation [4–6]. Here, we experimentally investigate the properties of indirect excitons in naturally-grown MoS2 -homobilayer, integrated in a dual-gate device structure allowing independent control of the electron density and out-of-plane electric field. Under conditions when electron tunneling between the layers is negligible [7], upon electron doping the sample, we ob- serve that the two excitons with opposing dipoles hybridize, displaying unusual behavior distinct from both conventional level crossing and anti- crossing. We show that these observations can be explained by static random coupling between the excitons, which increases with electron density and decreases with temperature. We argue that this phenomenon is indicative of a spatially fluctuating order parameter in the form of inter- layer electron coherence, a theoretically predicted many-body state [8] that has yet to be unambiguously established experimentally outside of the quantum Hall regime [6, 9–14]. Implications of our findings for future experiments and quantum optics applications are discussed.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: interlayer electron coherence, bilayer semiconductor
, MoS2 homobilayers


刊行年月日: 2025-08-20

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Physics (ISSN: 17452481) vol. 21 issue. 10 p. 1563-1569

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41567-025-02971-0

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更新時刻: 2026-05-11 13:34:46 +0900

MDRでの公開時刻: 2026-05-11 16:25:05 +0900