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Point defects in crystalline solids behave as optically addressable individual quantum systems when present in sufficiently low concentrations. In two-dimensional semiconductors, such quantum defects hold potential as versatile single photon sources. Here, we report the synthesis and optical properties of impurity-doped monolayer WS2 in the dilute limit where the average spacing between individual dopants exceeds the optical diffraction limit. We show that these individual dopants exhibit common features of quantum emitters, including narrow emission lines (with linewidths <1 meV), strong spatial confinement, and photon antibunching. These emitters consistently occur within a narrow spectral range across multiple samples, distinct from common quantum emitters in van der Waals materials that show large ensemble broadening. Analysis of the Zeeman splitting reveals that they can be attributed to bound exciton complexes comprising dark excitons and negatively charged Nb.

Rights:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

Keyword: Point defects, quantum systems, single photon sources

Date published: 2024-11-20

Publisher: Springer Science and Business Media LLC

Journal:

• Nature Communications (ISSN: 20411723) vol. 15 issue. 1 10035

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Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41467-024-54360-5

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Updated at: 2025-02-06 12:30:31 +0900

Published on MDR: 2025-02-06 12:30:31 +0900