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説明:

Point defects in crystalline solids behave as optically addressable individual quantum systems when present in sufficiently low concentrations. In two-dimensional semiconductors, such quantum defects hold potential as versatile single photon sources. Here, we report the synthesis and optical properties of impurity-doped monolayer WS2 in the dilute limit where the average spacing between individual dopants exceeds the optical diffraction limit. We show that these individual dopants exhibit common features of quantum emitters, including narrow emission lines (with linewidths <1 meV), strong spatial confinement, and photon antibunching. These emitters consistently occur within a narrow spectral range across multiple samples, distinct from common quantum emitters in van der Waals materials that show large ensemble broadening. Analysis of the Zeeman splitting reveals that they can be attributed to bound exciton complexes comprising dark excitons and negatively charged Nb.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Point defects, quantum systems, single photon sources

刊行年月日: 2024-11-20

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 15 issue. 1 10035

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-024-54360-5

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更新時刻: 2025-02-06 12:30:31 +0900

MDRでの公開時刻: 2025-02-06 12:30:31 +0900