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説明:

Ion energy dependence of track radius in Si was investigated under C60 ion irradiation between 30 keV and 9 MeV. The tracks were observed from 9 MeV down to 60 keV but not at 30 keV. The track radius gradually decreased with decreasing the energy from 9 MeV to 500 keV, showing a tentative increase around 300 keV followed by further decrease. Both (i) the track formation at exceptionally low energies and (ii) the non-monotonic energy dependence of the track radius, are explained by the ion energy dependence of electronic and nuclear energy losses of C60 ions in Si, i.e., the cluster-ion energy loss (CIEL) model.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: ion track, C60 ion, Silicon, Synergy effect, Cluster effect

刊行年月日: 2026-06-17

出版者: National Institute for Materials Science

掲載誌:

• Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (ISSN: 0168583X) vol. 579 166225

研究助成金:

• Japan Society for the Promotion of Science 25K08531 (疑似核分裂片としてのMeV-C60イオンで解明するトラック型損傷形成機構)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1016/j.nimb.2026.166225

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更新時刻: 2026-06-18 14:50:54 +0900

MDRでの公開時刻: 2026-06-18 16:28:55 +0900