Tianlin Li
;
Hanying Chen
;
Kun Wang
;
Yifei Hao
;
Le Zhang
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Xia Hong
Description:
(abstract)One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP) potential is promising for achieving the electron-lensing effect, while previous studies utilizing the modulated dielectric gates can only yield a moderate, spatially dispersed potential profile. Here, we realize high KP potential modulation of graphene via nanoscale ferroelectric domain gating. Graphene transistors are fabricated on PbZr0.2Ti0.8O3 back-gates patterned with periodic, 100-200 nm wide stripe domains. Due to band reconstruction, the h-BN top-gating induces satellite Dirac points in samples with current along the superlattice vector 𝑠̂, a feature absent in samples with current perpendicular to 𝑠̂. The satellite Dirac point position scales with the superlattice period (L) as ∝ 𝐿𝛽, with β = -1.18±0.06. These results can be well explained by the high KP potential scenario, with the Fermi velocity perpendicular to 𝑠̂ quenched to about 1% of that for pristine graphene. Our study presents a promising material platform for realizing electron supercollimation and investigating flat band phenomena.
Rights:
© 2024 American Physical Society
Keyword: Graphene superlattice, Kronig-Penney potential, Satellite Dirac points
Date published: 2024-01-31
Publisher: American Physical Society (APS)
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI:
First published URL: https://doi.org/10.1103/physrevlett.132.056204
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Updated at: 2025-08-28 08:30:27 +0900
Published on MDR: 2025-08-28 08:18:02 +0900
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